Antimonide-based depletion-mode metal-oxide-semiconductor field-effect transistors using small-bandgap InAs channel layers

作者：Lin H K^*; Liau G Y; Liu H K

来源：Journal of Vacuum Science and Technology B, 2010, 28(6): 1235-1238.

DOI：10.1116/1.3506111

Antimonide-based depletion-mode InAs channel metal-oxide-semiconductor field-effect transistors showing complete pinch-off characteristics are successfully demonstrated. The epitaxial antimonide materials are grown by molecular beam epitaxy and gate dielectrics are deposited by plasma-enhanced chemical vapor deposition. A device with a 2.0 mu m gate length shows a drain current density of 600 mA/mm at V(GS) = 0 V and a peak transconductance of 380 mS/mm at V(DS) = 1.5 V. Charge trapping at the dielectric-semiconductor interface is observed using pulsed ID -V(DS) measurements and is explained as a primary cause for the degradation of frequency performance of the device. c 2010 American Vacuum Society. [DOI: 10.1116/1.3506111]

• 出版日期2010-11
• 单位中央民族大学