摘要

Sb-doped and Cu-doped SnO2 thin films were deposited by the photochemical method. A solution containing SnSO4 and a doping solution containing SbCl3 or CuSO4 were alternately dropped on the glass substrate and irradiated by the UV light. The Auger electron spectroscopy measurement revealed that Sb or Cu was contained in the deposited thin films. The dependence of electrical properties of the films on annealing temperature was studied. The Cu-doped SnO2 thin film showed enhanced electrical conductivity after 400 degrees C annealing in a nitrogen atmosphere.

  • 出版日期2012-9-1