Fabrication of sub-12 nm thick silicon nanowires by processing scanning probe lithography masks

作者：Kyoung Ryu Yu; Aitor Postigo Pablo; Garcia Fernando; Garcia Ricardo^*

来源：Applied Physics Letters, 2014, 104(22): 223112.

DOI：10.1063/1.4881977

Silicon nanowires are key elements to fabricate very sensitive mechanical and electronic devices. We provide a method to fabricate sub-12 nm silicon nanowires in thickness by combining oxidation scanning probe lithography and anisotropic dry etching. Extremely thin oxide masks (0.3-1.1 nm) are transferred into nanowires of 2-12 nm in thickness. The width ratio between the mask and the silicon nanowire is close to one which implies that the nanowire width is controlled by the feature size of the nanolithography. This method enables the fabrication of very small single silicon nanowires with cross-sections below 100 nm(2). Those values are the smallest obtained with a top-down lithography method.

• 出版日期2014-6-2