Avalanche photodiode with high responsivity in 0.35 mu m CMOS

作者：Gaberl Wolfgang; Schneider Hornstein Kerstin^*; Enne Reinhard; Steindl Bernhard; Zimmermann Horst

来源：Optical Engineering, 2014, 53(4): 043105.

DOI：10.1117/1.OE.53.4.043105

• avalanche photodiode
• photodetector
• submicron CMOS technology

The presented linear mode avalanche photodiode (APD) uses the standard layers and process steps available in the 0.35-mu m Si bulk CMOS process. Due to a low-doped epitaxial layer with a resistivity of 664 Omega cm, a deep intrinsic zone is realized to enable a large depleted absorption region at already moderate bias voltages and therefore ensures a high low-voltage responsivity. In combination with avalanche gain at high bias voltages, this leads to an overall responsivity of 1.7 x 10(5) A/W at 1.1 nW optical input power and 670-nm wavelength. The maximum achieved avalanche gain was 4.94 x 10(5). The maximum -3 dB frequency of 700 MHz was measured at a reverse bias voltage of 30 V and an optical input power of 14.7 mu W.

• 出版日期2014-4