A Sequential Model Parameter Extraction Technique for Physics-Based IGBT Compact Models

作者：Navarro Dondee^*; Sano Takeshi; Furui Yoshiharu

来源：IEEE Transactions on Electron Devices, 2013, 60(2): 580-586.

DOI：10.1109/TED.2012.2223701

• Circuit simulation
• compact model
• HiSIM
• insulated-gate bipolar transistor (IGBT)
• macromodel
• parameter extraction

A sequential parameter extraction technique describing the fitting targets and related parameters for compact insulated-gate bipolar transistor (IGBT) models is presented. Using 2-D device simulation data for a trench-type IGBT as reference, the performance of HiSIM-IGBT as an example of a compact IGBT model is compared to an IGBT macromodel. Parameter extraction with the compact model is fast and straightforward, owing to its physics-basedmodeling. Even with minimal extraction effort, the compact model fits the dc current and capacitance and reproduces the transient turnoff characteristics accurately.

• 出版日期2013-2