A Reliable Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) Based on Radio-Frequency Analysis

作者：Seo Jae Hwa; Yoon Young Jun; Lee Hwan Gi; Yoo Gwan Min; Cho Eou Sik; Cho Seongjae; Lee Jung Hee; Kang In Man^*

来源：Journal of Nanoscience and Nanotechnology, 2014, 14(11): 8219-8224.

DOI：10.1166/jnn.2014.9884

• Series Resistance
• Silicon Nanowire (SNW)
• Radio-Frequency (RF)
• Off-State Channel Resistance
• Device Simulation
• Parameter Extraction

This paper presents a new extraction method for source and drain (SID) series resistances of silicon nanowire (SNW) metal-oxide-semiconductor field-effect transistors (MOSFETs) based on small-signal radio-frequency (RF) analysis. The proposed method can be applied to the extraction of SID series resistances for SNW MOSFETs with finite off-state channel resistance as well as gate bias-dependent on-state resistive components realized by 3-dimensional (3-D) device simulation. The series resistances as a function of frequency and gate voltage are presented and compared with the results obtained by an existing method with infinite off-state channel resistance model. The accuracy of the newly proposed parameter extraction method has been successfully verified by Z(22)- and Y-parameters up to 100 GHz operation frequency.

• 出版日期2014-11