Design analysis of polarization-doped N-face InGaN/GaN light-emitting diodes with different AlxGa1-xN graded layers

作者：Yang G F^*; Tong Y Y; Xie F; Yan D W; Wang F X

来源：Materials Science in Semiconductor Processing, 2015, 29: 362-366.

DOI：10.1016/j.mssp.2014.07.021

• N-face
• Light-emitting diodes
• Polarization doping
• Numerical study

The polarization-doped N-face blue InGaN/GaN light-emitting diodes (LEDs) with different Al content in the p-type graded AlxGa1-xN layers are investigated numerically, and the polarization doped Ga-face LED with the same structure is simultaneously simulated for comparison. The proposed N-face LEDs with low content in the graded AlxGa1-xN layer exhibit significant improvement for the light output power and hole injection efficiency at high applied voltages compared with the Ga-face counterpart. The enhanced performance for the N-face polarization doped LEDs is explained by the simulated energy band diagrams, distribution of electric field, carrier concentration and radiative recombination rate in the quantum wells.

• 出版日期2015-1
• 单位中国电子科技集团公司第三十八研究所; 江南大学