Measurement of the dopant concentration in a semiconductor using the Seebeck effect

作者：Po J M^*; Brito M C; Maia Alves J; Silva J A; Serra J M; Vallera A M

来源：Measurement Science and Technology, 2013, 24(5): 055601.

DOI：10.1088/0957-0233/24/5/055601

• semiconductor
• Seebeck effect
• dopant concentration

This paper describes a method for measuring the dopant concentration in a semiconductor using the Seebeck effect at a given point of a sample using a transient thermal gradient. The system was tested with high-purity metallic samples and several silicon samples with different concentrations of boron. The dopant concentrations of these samples obtained via the Seebeck coefficient were compared with those estimated from electric resistivity measurements using the standard four-point method. The results show that the method can be used for the local measurement of the doping level.

• 出版日期2013-5