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摘要
An equilibrium configuration of a Si/SiGe bilayer thin film is investigated using the finite element method. In the < 100 > direction, a nanoband, nanoring, and nanopipe are shaped in turn as the width-to-thickness ratio increases. In the < 110 > direction, a nanoband, nanospring, and nanopipe are shaped. The type of curved shape is determined by the width-to-thickness ratio and tilt angle from the < 110 > direction. The pitch angle of the nanospring is determined by the tilt angle from the < 110 > direction. The helix diameter is determined by the thickness, thickness ratio of the two layers, and composition ratio of the SiGe layer.
- 出版日期2011-7
