A unified analytical continuous current model applicable to accumulation mode (junctionless) and inversion mode MOSFETs with symmetric and asymmetric double-gate structures

作者：Jin Xiaoshi^*; Liu Xi; Wu Meile; Chuai Rongyan; Lee Jung Hee; Lee Jong Ho

来源：Solid-State Electronics, 2013, 79: 206-209.

DOI：10.1016/j.sse.2012.08.003

• Junctionless
• Double-gate
• MOSFETs
• Modeling

A unified analytical continuous model, based on an approximate solution of Poisson%26apos;s equation, is proposed for the current-voltage (I-V) characteristics of accumulation mode (junctionless FETs) and conventional inversion mode MOSFETs which have symmetric and asymmetric double-gate structures. As a unified model, it is applicable to both junctionless and conventional double-gate (DG) MOSFETs and also represents the I-V characteristics of the MOSFETs with symmetric and asymmetric cases. The model with symmetric and asymmetric gates accounts for body doping, body thickness, and front-gate and back-gate oxide thicknesses. The model is verified by comparing with TCAD simulation results and shows a good agreement.

• 出版日期2013-1
• 单位沈阳工业大学