A graphene field-effect device

作者：Lemme Max C^*; Echtermeyer Tim J; Baus Matthias; Kurz Heinrich

来源：IEEE Electron Device Letters, 2007, 28(4): 282-284.

DOI：10.1109/LED.2007.891668

• field effect
• graphene
• mobility
• MOSFET
• transistor

In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs.

• 出版日期2007-4