摘要
This paper presents, the studies of the influence of (radio frequency) RF power on the size distribution and visible photoluminescence (PL) of SiNx thin film deposited at 300 degrees C of substrate temperature by plasma enhanced chemical vapor deposition. RF power was varied (5-50 W), and its aftereffect on the optical properties of thin films was investigated. By increasing the RF power between 5 W and 25 W, main PL peak showed a red shift with an increase in PL intensity, which is associated with an increase in the silicon nanocrystals size and density, respectively. Results obtained were confirmed with High-resolution transmission electron microscopy micrographs and from the statistical calculations. By attaining a precise RF power value, stable silicon nitride thin film with suitable optical properties can be achieved for the potential fabrication of optoelectronic devices.
- 出版日期2017-6