科研之友
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摘要
By developing the special relation between the electron and the hole mobility-lifetime products ((mu T)(e) and (mu T)(h)), we propose a new approach to evaluate each parameter for gamma-rays instead of a particles. We assumed that the incident gamma-ray was absorbed by only one reaction within the semiconductors because the cross-section of the photoelectric effect is much higher than there of other reactions at low energies: For the planar CZT detector manufactured by eV Products, the values of (mu T)(e) = 1.44 x 10(-3) cm(2)/V and (mu T)(h), = 7.56 x 10(-5) cm(2)/V were simply derived by using a modified single-parameter Hecht equation and 59.5 keV gamma-rays emitted from the (241)Am isotope.
- 出版日期2011-7
