Advances in group III-nitride-based deep UV light-emitting diode technology

作者：Kneissl M^*; Kolbe T; Chua C; Kueller V; Lobo N; Stellmach J; Knauer A; Rodriguez H; Einfeldt S; Yang Z; Johnson N M; Weyers M

来源：Semiconductor Science and Technology, 2011, 26(1): 014036.

DOI：10.1088/0268-1242/26/1/014036

The field of AlGaInN ultraviolet UV light-emitting diodes (LEDs) is reviewed, with a summary of the state-of-the-art in device performance and enumeration of applications. Performance-limiting factors for high-efficiency UV LEDs are identified and recent advances in the development of deep UV emitters are presented.

• 出版日期2011-1