Universal intrinsic doping behavior of in-plane dc conductivity for hole-doped high-temperature cuprate superconductors

作者：Honma Tatsuya^*; Hor Pei Herng

来源：Physica C-Superconductivity and Its Applications, 2011, 471(17-18): 537-543.

DOI：10.1016/j.physc.2011.05.244

• Hole-doped cuprate superconductors
• In-plane conductivity
• Thermoelectric power

Understanding the normal state transport properties in hole-doped high-temperature cuprate superconductors (HTCSs) is a challenging task which has been widely believed to be one of the key steps toward revealing the pairing mechanism of high-temperature superconductivity. Here, we present a true intrinsic and universal doping dependence of in-plane dc conductivity for all underdoped HTCSs. The doping dependence of in-plane dc conductivity normalized to that at optimal doping can be represented by a simple exponential formula. The doping behavior of the square of the nodal Fermi velocity derived by the high-resolution laser-based angle-resolved photoemission spectroscopy in the superconducting state follows reasonably well the universal intrinsic doping behavior. Our findings suggest a commonality of the low-energy quasiparticles both in the normal and superconducting states that place a true universal and stringent constraint on the mechanism of high-temperature superconductivity for HTCSs.

• 出版日期2011-9