A Flexible IGZO Thin-Film Transistor With Stacked TiO2-Based Dielectrics Fabricated at Room Temperature

作者：Hsu Hsiao Hsuan^*; Chang Chun Yen; Cheng Chun Hu

来源：IEEE Electron Device Letters, 2013, 34(6): 768-770.

DOI：10.1109/LED.2013.2258455

• High-kappa
• indium-gallium-zinc oxide (IGZO)
• thin-film transistor (TFT)
• TiO2

This letter demonstrates the feasibility of full room temperature InGaZnO thin-film transistor (TFT) using trilayer gate dielectric on flexible substrate. Through integrating high-kappa SiO2/TiO2/SiO2 (STS) gate-stack as well as InGaZnO channel thickness modulation, the resulting flexible indium-gallium-zinc oxide (IGZO)/STS TFTs show low threshold voltage of 0.5 V, small subthreshold swing of 0.129 V/decade, high field effect mobility of 76 cm(2)/Vs, and good I-ON/I-OFF ratio of 6.7 x 10(5), which have the potential for the application of high-resolution flexible display.

• 出版日期2013-6