Anisotropy of In incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth

作者：Polyakov A Y^*; Govorkov A V; Smimov N B; Markov A V; Lee In Hwan; Ju Jin Woo; Pearton S J

来源：Applied Physics Letters, 2009, 94(14): 142103.

DOI：10.1063/1.3115807

• cathodoluminescence
• gallium compounds
• III-V semiconductors
• indium compounds
• MOCVD
• red shift
• semiconductor quantum wells
• wide band gap semiconductors

Microcathodoluminescence (MCL) spectra and monochromatic MCL images were measured for GaN/InGaN multiquantum well (MQW) structures prepared by epitaxial lateral overgrowth (ELOG). The MQW related peak is redshifted from 462 nm in the normally grown ELOG window region to 482 nm in the laterally overgrown ELOG wing region. Correspondingly, the former appears as dark contrast stripes for long wavelength MCL images and as bright stripes for the short wavelength MCL images. The redshift is consistent with a higher indium incorporation efficiency for growth in the [1120] direction compared to the [0001] direction.

• 出版日期2009-4-6