Buried-heterostructure mid-infrared quantum cascade lasers fabricated by non-selective regrowth and chemical polishing

作者：Chang C C; Kirch J D; Buelow P; Boyle C; Kuech T F; Lindberg D III; Earles T; Botez D; Mawst L J^*

来源：Electronics Letters, 2015, 51(14): 1098-1099.

DOI：10.1049/el.2015.1094

• quantum cascade lasers
• optical fabrication
• polishing
• iron
• indium compounds
• III-V semiconductors
• etching
• MOCVD
• buried-heterostructure mid-infrared quantum cascade lasers
• nonselective regrowth
• chemical polishing
• fabrication method
• deeply etched laser ridges
• metal-organic chemical vapour deposition
• planarisation
• heat dissipation
• continuous-wave operation
• etched-ridge sidewall profile
• physical dimensions
• dielectric mask
• MOCVD
• wavelength 4
• 75 mum
• temperature 20 degC
• InP:Fe

A novel fabrication method of buried-heterostructure (BH) mid-infrared quantum cascade lasers (QCLs) by using non-selective regrowth of iron-doped indium phosphide (InP) (Fe:InP), around deeply etched laser ridges, via metal-organic chemical vapour deposition (MOCVD) and planarisation via chemical polishing is reported. Owing to better heat dissipation, the fabricated 4.75 m emitting QCLs exhibit about three-fold enhancement in maximum output power under continuous-wave operation at room temperature (T = 20 degrees C) compared with that from lasers without the regrown InP. The demonstrated fabrication method provides a more flexible route to realising BH QCLs by removing strict requirements on the etched-ridge sidewall profile, as well as on the physical dimensions of the dielectric mask for the regrowth via MOCVD. The method can be further employed for making large-emitting aperture, closely packed arrays of QCLs, with planarised geometry, for coherent-power scaling.

• 出版日期2015-7-9