科研之友
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摘要
We demonstrate a simple direct nanoimprint lithography method of fabricating a copper oxide memory device for soft nanoelectronics. The process was done at room temperature with low pressure, so that a Cu2O resistive nanoarray could be fabricated not only on the Si substrate but also on the flexible polyimide substrate. The resistive switching of the fabricated 200 nm Cu2O nanopillar was observed at 2 V with a low current compliance of 5 mu A from a high-resistance state to a low-resistance state, and the reversible switching was done with a fast switching time of 10 ns and high endurance.
- 出版日期2012-12
