Tip-Induced Deformation of Graphene on SiO2 Assessed by Capacitance Measurement

作者：Naitou Yuichi^*

来源：Japanese Journal of Applied Physics, 2012, 51(11): 115101.

DOI：10.1143/JJAP.51.115101

Tip-induced deformation of graphene on a SiO2 substrate was probed through a combination of scanning capacitance microscopy (SCM) and dynamic force microscopy (DFM). Spectroscopic analysis revealed that the resonant frequency shift (Delta f) of the probe tip oscillation and the modulated capacitance (Delta C) simultaneously measured on graphene depend on the externally applied bias voltage while keeping the tip-sample distance constant. This finding is interpreted as a result of a local displacement of the graphene surface caused by the electrostatic force between the probe tip and graphene. The approach curve of the SCM tip toward graphene can be used to calibrate the observed Delta C spectra, quantitatively yielding an average deformation of approximately 0.31nm in trilayer graphene and 0.21 nm in single-layer graphene.

• 出版日期2012-11