A Ferroelectric Thin Film Transistor Based on Annealing-Free HfZrO Film

作者：Li, Yuxing; Liang, Renrong^*; Wang, Jiabin; Zhang, Ying; Tian, He; Liu, Houfang; Li, Songlin; Mao, Weiquan; Pang, Yu; Li, Yutao; Yang, Yi^*; Ren, Tian-Ling^*

来源：IEEE Journal of the Electron Devices Society, 2017, 5(5): 378-383.

DOI：10.1109/JEDS.2017.2732166

• Ferroelectric thin film transistor
• HfZrO
• annealing free

A ferroelectric thin film transistor (Fe-TFT) based on annealing-free hafnium zirconium oxide (HfZrO) is demonstrated in this paper. Indium zinc oxide was used as channel semiconductor. The as-deposited 30-nm HfZrO film implemented as gate dielectric was proved to be crystallized with a mixture of monoclinic, tetragonal, and orthorhombic phases and showed ferroelectricity naturally. Thus, high temperature annealing process was avoided. The transfer characteristic of this Fe-TFT was demonstrated with operating voltage that was smaller than 3 V, memory window about 1 V, and small subthreshold slope (SS) about 82 mV/dec. The charge trapping phenomenon in this device was explored by characterizing the transfer curves with different ranges of gate voltages. This HfZrO-based device with low processing thermal budget and small SS has high potential for Fe-TFT memory which can be used in oxide semiconductor-based systems and applications.

• 出版日期2017-9
• 单位清华大学