Multichannel poly-si thin-film transistors prepared by excimer laser annealing with channel width comparable or smaller than the grain size

作者：Yang Po Chuan^*; Kuo Ping Sheng; Lee Si Chen

来源：IEEE Transactions on Electron Devices, 2008, 55(8): 2129-2133.

DOI：10.1109/TED.2008.925288

• polycrystalline silicon
• thin-film transistor (TFT)

This paper presents results on low-temperature (< 500 degrees C) multichannel poly-Si thin-film transistors (TFTs) prepared by KrF excimer laser annealing with a channel width that is comparable to or smaller than the poly-Si grain size. The cross-sectional scanning electron microscope is used to measure the effective channel width, and TCAD software is used to simulate the electron density distribution in the channel region. It is found that the TFTs with ten 40-nm-wide multichannels have superior electrical characteristics, including a higher on/off current ratio (> 10(7)), lower leakage current (8.8 x 10(-14) A), less grain boundary defects density, and a better subthreshold swing (0.45 V/dec).

• 出版日期2008-8
• 单位中国科学院电工研究所