摘要

This paper presents an all-digital true random number generator (TRNG) harvesting entropy from the collapse of two edges injected into one even-stage ring, fabricated in 40 and 180 nm CMOS technologies. A configurable ring and tuning loop provides robustness across a wide range of temperature (-40 degrees C to 120 degrees C), voltage (0.6 to 0.9 V), process variation, and external attack. The dynamic tuning loop automatically configures the ring to meet a sufficient collapse time, thereby maximizing entropy. Measured random bits pass all NIST randomness tests across all measured operating conditions and power supply attacks. In 40 nm, the TRNG occupies only 836 mu m(2) and consumes 23 pJ/bit at nominal 0.9 V and 11 pJ/bit at 0.6 V.

  • 出版日期2016-4