Deep traps in GaN-based structures as affecting the performance of GaN devices

作者：Polyakov Alexander Y; Lee In Hwan^*

来源：Materials Science and Engineering: R: Reports , 2015, 94: 1-56.

DOI：10.1016/j.mser.2015.05.001

• III-Nitrides
• Dislocations
• Deep traps
• HEMT
• LED
• Device degradation

New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent to compensation and recombination in these materials are discussed. New results on experimental studies on defect states of Si, O, Mg, C, Fe in GaN, InGaN, and AlGaN are surveyed. Deep electron and hole traps data reported for GaN and AlGaN are critically assessed. The role of deep defects in trapping in AlGaN/GaN, InAlN/GaN structures and transistors and in degradation of transistor parameters during electrical stress tests and after irradiation is discussed. The recent data on deep traps influence on luminescent efficiency and degradation of characteristics of III-Nitride light emitting devices and laser diodes are reviewed.

• 出版日期2015-8