Anisotropic etching of p-Si in HF solution

作者：Outemzabet R^*; Benzekour N; Gabouze N; Kesri N; Ait Hamouda K

来源：Acta Physica Slovaca, 2003, 53(5): 359-371.

In situ electrochemical attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy has been used to study the etching process on a Si (100), (110) and (111) surface in dilute HF solution. On the other hand I-V characteristic of the p-Si-HF system was used for the interface reactions and kinetics study. Infrared results show that monohydride (SiH) and hydroxyl (Si-OH) species surface concentration depend on the applied potential to the electrode. I-V characteristics show a relative variation in magnitude of the first peak as the substrate orientation is changed. A mechanism of silicon dissolution is proposed.

• 出版日期2003-10