A 0.4-V Wide Temperature Range All-MOSFET Subthreshold Voltage Reference With 0.027%/V Line Sensitivity

作者：Liu, Yang; Zhan, Chenchang^*; Wang, Lidan; Tang, Junyao; Wang, Guanhua

来源：IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2018, 65(8): 969-973.

DOI：10.1109/TCSII.2018.2794512

• Voltage reference
• low voltage
• low power
• nanowatt
• high power supply rejection ratio
• low line sensitivity

This brief presents a CMOS voltage reference for ultra-low-power applications, such as in implementable medical devices and energy harvesting-based wireless sensor nodes. In these applications, excellent capabilities to reject interference from power sources and work in low voltage to extend survival periods are critical for the voltage references. A transistor size-ratio determined current generator with high process and voltage independence is implemented by two same-thresholdvoltage NMOS transistors, hence obtaining the precise reference voltage with an active load. The proposed circuit is fabricated in a standard 0.18-mu m CMOS process. Measurement results show that the prototype design provides a 210-mV reference with only 0.027% line sensitivity with a supply voltage from 1.8 V down to 0.4 V. The power supply ripple rejection at 10 Hz, 1 KHz, and 1 MHz is -59, 47, and 53 dB, respectively. The temperature coefficient is 82 ppm/degrees C in the temperature range from -40 degrees C to +140 degrees C. Furthermore, the power consumption is only 9.6 nW at room temperature and the active area is 0.021 mm(2).

• 出版日期2018-8
• 单位南开大学