摘要

Dispersive transport of charge carriers in disordered nanostructured semiconductors is described in terms of integral diffusion equations nonlocal in time. Transient photocurrent kinetics is analyzed for different situations. Relation to the fractional differential approach is demonstrated. Using this relation provides specifications in interpretation of the time-of-flight data. Joint influence of morphology and energy distribution of localized states is described in frames of the trap-limited advection-diffusion on a comb structure modeling a percolation cluster.

  • 出版日期2015-7-15

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