A 0.6–2.4 GHz broadband GaN HEMT power amplifier with 79.8% maximum drain efficiency

作者:Ni Chun*; Zhang Zhongxiang; Kong Meng; Chen Mingsheng; Wang Hui; Wu Xianliang
来源:2nd EAI International Conference on Industrial IoT Technologies and Applications, Industrial IoT 2017, 2017-03-25 To 2017-03-26.
DOI:10.1007/978-3-319-60753-5_23

摘要

A highly efficient and broadband 10 W GaN HEMT power amplifier (PA) is presented, which employs the hybrid PA mode, transferring between continuous Class-F, continuous Class-B/J and continuous inverse Class-F. A GaN PA is designed and realized based on this mode-transferring operation using low-pass filter output matching network. The maximum theoretical efficiency of this hybrid continuous modes PA is more than 78.5%. Specifically, the operating bandwidth is determined by the low pass filter output matching network and the theoretical bandwidth can achieved multi-octave. The proposed design strategy is experimentally verified by a 0.6–2.4 GHz PA design with 79.8% maximum drain efficiency and 10 W output power. The footprint of the fabricated PA is 75 mm ×40 mm.

  • 出版日期2017

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