A WORM type polymer electrical memory based on polyethersulfone with carbazole derivatives

作者:Fang, Jiyong; Wang, Qinhong; Yue, Xigui*; Wang, Guibin; Jiang, Zhenhua
来源:High Performance Polymers, 2016, 28(10): 1183-1191.
DOI:10.1177/0954008315621122

摘要

A series of high-performance polyethersulfone, which had pendent carbazole moieties (Cz-PES 1-3), have been designed and successfully synthesized for an application in a write-once read-many type memory device as the active polymer layer. The memory performance can be tuned by changing the substituent in the Cz derivatives units. Cz-PES 3 with excellent thermal properties (T-g = 185 degrees C and T-d = 378 degrees C) exhibits the best memory performance. For Cz-PES 3-based device indium tin oxide/Cz-PES 3/aluminum, the turn-on voltage is 2.5 V and the ON/OFF current ratio is higher than 10(6). Moreover, the data can be maintained for longer than 3 x 10(5) s once written and can be read for more than 450 cycles under a reading voltage of 1.0 V at ambient conditions. Thus Cz-PES 3 can serve as an excellent memory material in the data storage field of next generation.