All-magnetic magnetoresistive random access memory based on four terminal mCell device

作者：Bromberg D M^*; Sumbul H E; Zhu J G; Pileggi L

来源：Journal of Applied Physics, 2015, 117(17): 17B510.

DOI：10.1063/1.4913279

Magnetoresistive random access memory (MRAM) is a promising candidate to enable fast, non-volatile storage on chip. In this paper, we present an MRAM design where each bitcell is comprised entirely of four-terminal magnetic devices ("mCells") with no CMOS access transistors. We show that this design can achieve significant energy and area savings compared to the standard one transistor-one magnetic tunnel junction (1T1MTJ) bitcell based design. We estimate a write energy of approximate to 5 fJ/bit based on bitline and wordline voltages that operate at less than 100 mV with projected area smaller than that possible with aggressively scaled 10 nm node FinFETs in the 1T1MTJ design.

• 出版日期2015-5-7