Near-ballistic uni-traveling-carrier photodiode-based V-band optoelectronic mixers with internal up-conversion-gain, wide modulation bandwidth, and very high operation current performance

作者：Shi J W^*; Wu Y S; Lin Y S

来源：IEEE Photonics Technology Letters, 2008, 20(9-12): 939-941.

DOI：10.1109/LPT.2008.922913

• high-power photodiodes (PDs)
• optoelectronic mixer

We construct a high-performance optoelectronic mixer by integrating a near-ballistic uni-traveling-carrier photodiode with a V-band (50-75 GHz) coplanar-waveguide-based bandpass filter. The demonstrated device shows an improvement in the V-band output radio-frequency (RF) power and conversion loss of around 3 and 10 dB, respectively, over that of the control device, which does not have such an integrated filter. The strong nonlinearity of the ballistic-transport of the electrons in the active device, and the excellent RF performance of the integrated filter help us to achieve an internal-conversion gain of around 1 dB, from the low to very high optical injected local-oscillator power (20.6 dBm), which corresponds to an approximately 17-mA high-output photocurrent, and very wide up-conversion bandwidth (> 15 GHz) at the V-band.

• 出版日期2008-6
• 单位中央民族大学