Ab initio investigation of oxygen adsorption on the stability of carbon nanotube field effect transistors (CNTFETs)

作者：Ngwashi D K^*; Cross R B M

来源：Solid State Communications, 2010, 150(5-6): 258-261.

DOI：10.1016/j.ssc.2009.11.014

• CNTFET
• Schottky barrier
• Charge transfer doping
• Oxygen adsorption

The influence of oxygen on carbon nanotube field effect transistors (CNTFETs) produced by the charge transfer doping technique, using triethyloxonium hexachloroantimonate ([(C(2)H(5))(3)O](+)[SbCl(6)](-)) is reported. Using ab initio density functional theory (DFT), it is suggested that the adsorption of oxygen on the surface of a functionalized carbon nanotube (CNT) could influence both the chemical and electrical stability of this device. Reduced doping is also observed as a consequence of the oxygen adsorption, which could possibly result in a small increase in the Schottky barrier height (SBH) at the metal (source and drain) electrodes.

• 出版日期2010-1