Modification of structure, morphology and physical properties of tin sulfide thin films by pulsed laser irradiation

作者：Avellaneda D; Krishnan B; Das Roy T K; Castillo G A; Shaji S^*

来源：Applied Physics A-Materials Science & Processing, 2013, 110(3): 667-672.

DOI：10.1007/s00339-012-7148-3

This paper presents modification of tin sulfide (SnS) thin films by pulsed laser irradiation. Tin sulfide films of 1 mu m thickness were prepared using chemical bath deposition (CBD) technique. The chemical bath contained 5 ml acetone, 12 ml of triethanolamine, 8 ml of 1 M thioacetamide, 10 ml of 4 M ammonium hydroxide and 65 ml of distilled water. The chemical bath was kept at a constant temperature of 60 degrees C for 6 h which resulted in SnS films with 500 nm thickness. By double deposition, the final thickness of SnS thin films obtained was 1 mu m. Laser processing was conducted to modify the structure, morphology and physical properties of the SnS thin films. The laser specifications were pulsed Nd:YAG laser with 532 nm wavelength, 300 mJ pulse energy and 10 ns pulse width. Properties of the laser-irradiated SnS thin films were compared with the as-prepared SnS thin films. The changes in structure, morphology, optical and electrical properties of the laser-irradiated SnS thin films were described.

• 出版日期2013-3