摘要

This letter proposes an inline RF power sensor based on fixed capacitive coupling for GaAs MMIC applications. In the design, a certain percentage of the input power coupled by a beam and sensed in a thermopile sensor, where the beam is not required to release to obtain a fixed capacitance for high-power levels and increase the dynamic range. This sensor offers the compatible capability with the GaAs MMIC technology. Measured reflection and insertion losses are <-24.2 and 0.73 dB at X -band, respectively. Experiments demonstrate that this inline sensor exhibits good linearity of the output response from 1 to 200 mW, and results in the average sensitivity of ∼ 29.5 μ V/mW at 10 GHz. The sensitivity increases with the increase of the X -band frequency, with small measurement errors.