Different Resistive Switching Characteristics of a Cu/SiO2/Pt Structure

作者:Liu Chih Yi*; Sung Po Wei
来源:Japanese Journal of Applied Physics, 2011, 50(9): 091101.
DOI:10.1143/JJAP.50.091101

摘要

A 20-nm SiO2 thin film was deposited using a radio-frequency magnetron sputter to form a Cu/SiO2/Pt structure. Resistance of the Cu/SiO2/Pt device was reversibly switched between the high resistance-state and the low resistance-state using dc voltages. The switching behaviors and the conduction mechanisms suggested that a conducting filament model would best explain the resistance switching. Both unipolar and bipolar switching behaviors were observed in the identical device by using different voltage operations. The detailed switching mechanism can not be differentiated by the switching behaviors directly. This study adopted current sweeping mode, reset current, and sweeping speed to distinguish the conducting model from the thermochemical and the electrochemical reactions.

  • 出版日期2011-9