Nitride-Based Asymmetric Two-Step Light-Emitting Diode With In0.08Ga0.92N Shallow Step

作者：Kuo Cheng Huang^*; Fu Y K; Yeh C L; Tun C J; Chen P H; Lai Wei Chih; Chang Shoou Jinn

来源：IEEE Photonics Technology Letters, 2009, 21(6): 371-373.

DOI：10.1109/LPT.2008.2012118

• InGaN-GaN
• light-emitting diode (LED)
• low indium composition
• single-quantum-well (SQW)

A nitride-based asymmetric two-step light-emitting diode ( LED) with In0.08Ga0.92N shallow step was proposed and fabricated. It was found that the low indium content In0.08Ga0.92N layer can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In0.27Ga0.73N layer. It was also found that we can enhance LED output power by a factor of 2.27 by simply inserting an In0.08Ga0.92N shallow step.

• 出版日期2009-3-15
• 单位中央民族大学