Diffusion profiles and magnetic properties of Mn-implanted silicon after thermal annealing

作者：Chow Lee^*; Gonzalez J C; Del Barco E; Vanfleet R; Misiuk A; Prujszczyk M; Shunmugavelu A; Chai G; Bak Misiuk J

来源：Journal of Materials Science: Materials in Electronics , 2008, 19: S263-S268.

DOI：10.1007/s10854-007-9481-4

Re-distribution of Mn atoms implanted into Czochralski silicon (CzSi: Mn) and floating zone silicon (FzSi: MN) after thermal annealing between 300 and 1,000 degrees C have been investigated by secondary ion mass spectroscopic technique. The motivation behind our study comes from recent report of strong magnetic ordering up to 400 K of Mn(+) implanted silicon samples reported by Bolduc et al. (Phys Rev B 71: 033302, 2005). Our silicon substrates were implanted with 160 keV Mn(+) ion to a dose of 1 x 10(16) cm(-2) at either room temperature or at 340 degrees C. The Mn profiles after annealing above 900 degrees C showed multiple concentration peaks for the 340 degrees C implanted samples, but not for the samples implanted at room temperature. We also carried out cross sectional TEM and ferromagnetic resonance measurements to correlate the micro-structural and magnetization data with the Mn depth profile obtained by SIMS.

• 出版日期2008-12