A Compact 30-W AlGaN/GaN HEMTs on Silicon Substrate With Output Power Density of 8.1 W/mm at 8 GHz

作者：Lee Min Seong^*; Kim Donghwan; Eom Sukeun; Cha Ho Young; Seo Kwang Seok

来源：IEEE Electron Device Letters, 2014, 35(10): 995-997.

DOI：10.1109/LED.2014.2343233

• AlGaN/GaN-on-Si
• power density
• PAE
• X-band
• amplifier

A 29.4-W X-band high-power amplifier has been substantialized using GaN on high-resistive silicon substrate. The developed GaN high electron mobility transistor (HEMT) with 3.6-mm gate periphery provides 29.4-W output power and 8-dB small signal gain at 8 GHz with power added efficiency of 39.4% under pulse condition at a duty of 10% with a pulsewidth 100 mu s. Load-pull measurement at 8 GHz demonstrates an output power density of 8.1 W/mm. To the best of our knowledge, the presented amplifier exhibits the highest power density, delivering > 10 W of output power in X-band for GaN HEMTs technology on silicon substrate.

• 出版日期2014-10