An improvement of HfO2/Ge interface by iremote N-2 plasma pretreatment for Ge MOS devices

作者：Chi, Xiaowei; Lan, Xiaoling; Lu, Chao; Hong, Haiyang; Li, Cheng^*; Chen, Songyan; Lai, Hongkai; Huang, Wei; Xu, Jianfang

来源：Materials Research Express, 2016, 3(3): 35012.

DOI：10.1088/2053-1591/3/3/035012

• Ge MOS
• RPALD
• N-2 plasma pretreatment
• HfO2/Ge interface

In situ remote N-2 plasma pretreatment of Ge substrate before deposition of HfO2 is proved effective to reduce GeOx interlayer at the HfO2/Ge interface, resulting in a smaller capacitance equivalent oxide thickness, lower interface trap density and leakage current density for the metal/HfO2/n-Ge capacitors. However, it has no obvious impact on the metal/HfO2/p-Ge capacitors, showing a much higher interface trap density than that on n-Ge. The high equivalent permittivity of the HfO2 gate stacks (similar to 24.2) confirmed the removal of GeOx interlayer by N-2 plasma pretreatment. In situ remote N-2 plasma pretreatment is demonstrated perspective to make metal/HfO2/n-Ge MOSFET with scaling capacitance equivalent oxide thickness.

• 出版日期2016-3
• 单位厦门大学