An alternative approach for femtosecond laser induced black silicon in ambient air

作者：Ma, Yuncan; Ren, Hai; Si, Jinhai^*; Sun, Xuehui; Shi, Haitao; Chen, Tao; Chen, Feng; Hou, Xun

来源：Applied Surface Science, 2012, 261: 722-726.

DOI：10.1016/j.apsusc.2012.08.087

• Black silicon
• Femtosecond laser
• Selectively etching
• Absorption
• Ambient air

An alternative approach for femtosecond laser induced black silicon in ambient air is proposed, in which, black silicon is fabricated on a tellurium coated silicon substrate via femtosecond laser irradiation in ambient air, and selectively etching with hydrofluoric acid is employed to remove the incorporated oxygen. Results of energy dispersive X-ray spectroscopy analysis and absorption measurement show that oxygen is effectively eliminated via etching, and the optical absorption of the black silicon is enhanced.

• 出版日期2012-11-15
• 单位西安交通大学