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摘要
The lanthanide aluminates GdAlO(3) and LuAlO(3) have been examined for integration into advanced non-volatile memory devices. From a materials point of view, a number of physical properties of the material need to be understood prior to successful device integration, such as e. g. band gap, dielectric permittivity, or crystallization behavior. In addition to these material properties, the layers may have to withstand high thermal budgets during device processing such that thermal stability and interdiffusion in contact with surrounding materials become important.
- 出版日期2011
