A Novel Characterization Scheme of Si/SiO2 Interface Roughness for Surface Roughness Scattering-Limited Mobilities of Electrons and Holes in Unstrained- and Strained-Si MOSFETs

作者：Zhao Yi^*; Matsumoto Hirosaki; Sato Takeshi; Koyama Susumu; Takenaka Mitsuru; Takagi Shinichi

来源：IEEE Transactions on Electron Devices, 2010, 57(9): 2057-2066.

DOI：10.1109/TED.2010.2052394

• Mobility calculation model
• MOSFET
• Si/SiO2 interface
• strained Si
• surface roughness scattering

In this paper, a novel method to directly determine the surface roughness scattering-limited mobilities (mu(sr)) of electrons and holes in Si MOSFETs from the experimental data of MOS interface roughness is proposed and compared with the experimental mu(sr) of Si MOSFETs with and without biaxial tensile strain. This method includes the direct evaluation of the scattering potential from the power spectra of Si/SiO2 interface roughness data, which are taken through high-resolution advanced transmission electron microscopy measurements, without assuming any autocorrelation function form of the interface roughness, like a Gaussian or exponential function. It is found, for the first time, that, by employing the present method, experimental electron and hole mu(sr) (both unstrained and strained Si) could be presented by a same model. As a result, the difference in strain dependence between electron and hole mu(sr), which has experimentally been observed, is systematically explained by the change of power spectra of the interface roughness due to strain.

• 出版日期2010-9