A 325 GHz InP HBT Differential-Mode Amplifier

作者：Hacker J B^*; Lee Y M; Park H J; Rieh J S; Kim M

来源：IEEE Microwave and Wireless Components Letters, 2011, 21(5): 264-266.

DOI：10.1109/LMWC.2011.2116152

• InP HBT
• monolithic microwave integrated circuit (MMIC)
• terahertz amplifier

An MMIC amplifier operating at the highest reported frequency up to date for indium-phosphide double-heterojunction bipolar (DHBT) transistor technology is presented. The amplifier chain consists of seven unit-cell stages that contain differential-pair common-base HBTs and compact inverted microstrip matching networks. Amplifier operation in differential mode generates a virtual RF ground at a convenient location inside the unit cell. The measurements at 325 GHz show a small signal gain of 25 dB and a maximum output power of -1.5 dBm. An amplifier gain of greater than 20 dB is observed over 60 GHz bandwidth extending from 285 to 345 GHz.

• 出版日期2011-5