An approach to enhanced acceptor concentration in ZnO:N films

作者：Li, L.^*; Shan, C. X.; Li, B. H.; Zhang, J. Y.; Yao, B.; Shen, D. Z.; Fan, X. W.; Lu, Y. M.

来源：Journal of Materials Science, 2010, 45(15): 4093-4096.

DOI：10.1007/s10853-010-4497-1

• MOLECULAR-BEAM EPITAXY
• THIN-FILMS
• ROOM-TEMPERATURE
• DEPOSITION
• EMISSION
• NO

Owing to the low doping concentration of nitrogen and strong compensation of intrinsic donors, the attainment of highly conductive p-type ZnO films remains one of the largest challenges for the application of ZnO. An approach has been proposed to increase the doping concentration of nitrogen in ZnO by exposing the ZnO:N films in the ambient of nitrogen plasma periodically in this paper. Hall measurements and photoluminescence spectroscopy indicate that this approach is effective in improving the hole concentration in ZnO films. Under the optimized conditions, a p-type ZnO film with a hole concentration of 1.68 x 10(18) cm(-3) has been achieved.

• 出版日期2010-8
• 单位深圳大学; 中国科学院长春光学精密机械与物理研究所