A Ku-band wide-tuning-range high-output-power VCO in InGaP/GaAs HBT technology

作者:张金灿; 张玉明; 吕红亮; 张义门; 刘博; 张雷鸣; 向菲
来源:Chinese Journal of Semiconductors, 2015, 36(06): 160-164.
DOI:10.1088/1674-4926/36/6/065010

摘要

A fully integrated Ku-band voltage controlled oscillator(VCO) is presented in an InGaP/GaAs heterojunction bipolar transistor(HBT) technology. To achieve the wide tuning range(TR), the VCO employs a Colpitts configuration, and the VCO simultaneously achieves high output power. The implemented VCO demonstrates an oscillation frequency range from 12.82 to 14.97 GHz, a frequency TR of 15.47%, an output power from 0.31 to6.46 d Bm, and a phase noise of 94:9 d Bc/Hz at 1 MHz offset from 13.9 GHz center frequency. The VCO consumes 52.75 m W from 5 V supply and occupies an area of 0.81 0.78 mm2. Finally, the figures-of-merit for VCOs is discussed.