ASIC for SDD-Based X-Ray Spectrometers

作者：De Geronimo Gianluigi^*; Rehak Pavel; Ackley Kim; Carini Gabriella; Chen Wei; Fried Jack; Keister Jeffrey; Li Shaorui; Li Zheng; Pinelli Donald A; Siddons D Peter; Vernon Emerson; Gaskin Jessica A; Ramsey Brian D; Tyson Trevor A

来源：IEEE Transactions on Nuclear Science, 2010, 57(3): 1654-1663.

DOI：10.1109/TNS.2010.2044809

• ASIC
• charge sharing
• high rate
• LVDS
• PUR
• SDD

We present an application-specific integrated circuit (ASIC) for high-resolution x-ray spectrometers (XRS). The ASIC reads out signals from pixelated silicon drift detectors (SDDs). The pixel does not have an integrated field effect transistor (FET); rather, readout is accomplished by wire-bonding the anodes to the inputs of the ASIC. The ASIC dissipates 32 mW, and offers 16 channels of low-noise charge amplification, high-order shaping with baseline stabilization, discrimination, a novel pile-up rejector, and peak detection with an analog memory. The readout is sparse and based on custom low-power tristatable low-voltage differential signaling (LPT-LVDS). A unit of 64 SDD pixels, read out by four ASICs, covers an area of 12.8 cm(2) and dissipates with the sensor biased about 15 m W/cm(2). As a tile-based system, the 64-pixel units cover a large detection area. Our preliminary measurements at -44 degrees C show a FWHM of 145 eV at the 5.9 keV peak of a (55)Fe source, and less than 80 eV on a test-pulse line at 200 eV.

• 出版日期2010-6