MOVPE growth of nonpolar a-plane GaN with low oxygen contamination and specular surface on a freestanding GaN substrate

作者：Isobe Yasuhiro; Ikki Hiromichi; Sakakibara Tatsuyuki; Iwaya Motoaki^*; Takeuchi Tetsuya; Kamiyama Satoshi; Akasaki Isamu; Sugiyama Takayuki; Amano Hiroshi; Imade Mamoru; Mori Yusuke

来源：Journal of Crystal Growth, 2012, 351(1): 126-130.

DOI：10.1016/j.jcrysgro.2012.04.030

• Impurities
• Metalorganic vapor phase epitaxy
• Semiconducting gallium compounds
• High electron mobility transistors

We investigated unintentionally doped nonpolar a- and m-plane GaN layers grown by metalorganic vapor phase epitaxy under several sets of conditions on freestanding a- and m-plane GaN substrates. Oxygen contamination in a-plane GaN is greatly reduced by increasing the V/III ratio during growth. As a result, a high-resistivity GaN buffer layer for an AlGaN/GaN heterostructure field-effect transistor was realized.

• 出版日期2012-7-15