Analytic Model for the Surface Potential and Drain Current in Negative Capacitance Field-Effect Transistors

作者：Jimenez David^*; Miranda Enrique; Godoy Andres

来源：IEEE Transactions on Electron Devices, 2010, 57(10): 2405-2409.

DOI：10.1109/TED.2010.2062188

• Field-effect transistors (FETs)
• low-power switching
• metal-ferroelectric-semiconductor (MFS) devices
• negative capacitance (NC) devices
• nonvolatile memories
• steeper subthreshold transistors

In 2008, Salahuddin and Datta proposed that a ferroelectric material operating in the negative capacitance (NC) region could act as a step-up converter of the surface potential in a metal-oxide-semiconductor structure, opening a new route for the realization of transistors with steeper subthreshold characteristics (S < 60 mV/dec). In this paper, a comprehensive physics-based surface potential and a drain current model for the NC field-effect transistor are reported. The model is aimed to evaluate the potentiality of such transistors for low-power switching applications. This paper also sheds light on how operation in the NC region can be experimentally detected.

• 出版日期2010-10