An atomistic investigation of the impact of in-plane uniaxial stress during solid phase epitaxial regrowth

作者:Sklenard Benoit*; Barbe Jean Charles; Batude Perrine; Rivallin Pierrette; Tavernier Clement; Cristoloveanu Sorin; Martin Bragado Ignacio
来源:Applied Physics Letters, 2013, 102(15): 151907.
DOI:10.1063/1.4802203

摘要

We propose an atomistic comprehensive model based on a lattice kinetic Monte Carlo approach to analyse the impact of in-plane uniaxial stress during solid phase epitaxial regrowth. We observed no influence of tensile stress on the regrowth kinetics. In contrast, compressive stress leads to (i) a reduction of the macroscopic regrowth velocity, (ii) an enhancement of the amorphous/crystalline interface roughness, and (iii) defective Si formation. Our observations are in good agreement with experimental data from the literature. Our atomistic approach also clarifies the interpretation of the interface morphological instability based on the kinetics of microscopic events.

  • 出版日期2013-4-15
  • 单位中国地震局