A new microwave dielectric material Ni0.5Ti0.5NbO4

作者：Liao Qingwei; Li Lingxia^*; Ren Xiang; Yu Xiaoxu; Meng Qinglei; Xia Wangsuo

来源：Materials Letters, 2012, 89: 351-353.

DOI：10.1016/j.matlet.2012.08.078

• Ceramics
• Crystal structure
• Low-loss
• Dielectric properties
• Niobates

A new low-loss, low sintering temperature microwave dielectric material Ni0.5Ti0.5NbO4 was investigated for the first time. The samples were prepared by solid state reaction method. Single phase Ni0.5Ti0.5NbO4 was obtained and it showed Rutile structure. The variation trend of dielectric constant is in accordance with variation trend of relative density. When the sintering temperature was lower than 1100 degrees C. the Of value mainly depended on the density. However, when the sintering temperature was higher than 1100 degrees C. the Qf value mainly depended on crystal structure. With increase of unit cell volume, the tau(f) increased. The following typical values epsilon=56.8, Qf=21,100 GHz, tau(f)=79.1 x 10(-6)/degrees C were obtained for Ni0.5Ti0.5NbO4 (1100 degrees C/6 h). According to the EIA-198-E, Ni0.5Ti0.5NbO4 met the demand of P2G (N150 for Industry Codes) series.

• 出版日期2012-12-15
• 单位天津大学